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  PS20039 dvb-s satellite tuner with rf bypass data sheet 291467 issue 1 nov-11 figure 1 -basic block diagram ordering information PS20039c1q1 b t 28 qfn tape & reel (6k) PS20039c1q1 b 5 28 qfn trays -10 c to +85 c description the PS20039 is a fully integrated direct conversion tuner for digital satellite receiver systems, targeted primarily at free-to-air dvb-s receivers where high sensitivity is a priority. the device also contains a rf bypass for connecting to a second receiver module. the PS20039 is simple to use, requiring no alignment or tuning algorithms and uses a minimum number of external components. the device is programmable via a i 2 c compatible bus. equivalent parts: intel ce5039 features ? direct conversion tuner for quadrature down conversion from l-band to zero if ? symbol rate 1-45 msps ? excellent sensitivity <- 84.5 dbm at 27.5 msps ? independent rf agc and baseband gain control ? fifth order baseband filters with bandwidth adjustable from 6 to 43 mhz ? fully integrated alignment-free low phase noise local oscillator ? selectable rf bypass ? i 2 c compatible control ? 3.3 volt supply ? 28 pin 5x5 mm qfn package applications ? dvb-s free-to-air satellite receiver systems ? 8psk satellite receiver systems data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 1
p s20039 data sheet figure 1 - basic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 figure 2 - pin diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 figure 3 - detailed block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 4 - typical application with ps20 313 demodulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 5 - gain v. rfagc at 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 6 - gain v rfagc v. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7 - iip3 v gain at 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 8 - iip3 v gain v temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 9 - iip2 v gain at 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 10 - iip2 v gain v temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 11 - noise figure v freq at 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 12 - noise figure v rfin v temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 13 - lo phase noise at 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 14 - lo phase noise v temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 15 - rfin, rf bypass return loss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 16 - rf bypass gain v temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 17 - baseband filter response 26.5 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 2
PS20039 data sheet figure 2 - pin diagram table 1 - pin names note: ground contact is via underside of package. pin 2 is connected to ground internally. pin # name description pin # name description 1 vvar lo tuning voltage 15 qout q channel baseband output 2 pad/ref vvar reference ground / continuity test 16 qout q channel baseband output 3 vccvco vco supply 17 vccbb baseband supply 4 vcclo lo supply 18 iout i channel baseband output 5 lotest lo test pin - do not connect 19 iout i channel baseband output 6 rfbypass rf bypass output 20 sleep hardware power down input 7 vccrf2 rf supply 21 scl i 2 c clock 8 vccrf1 rf supply 22 sda i 2 c data 9 n/c not connected 23 p0 general purpose switching output 10 rfin rf input 24 xcap crystal oscillator feedback 11 n/c not connected 25 xtal crystal oscillator crystal input 12 n/c not connected 26 vccdig digital supply 13 n/c not connected 27 vcccp varactor tuning supply 14 rfagc rf gain control input 28 pump pll charge pump output ground - package paddle PS20039 1 rfagc n/c rfin n/c n/c n/c vccrf1 vvar pad/ref vccvco vcclo lotest rfbypass vccrf2 scl sda p0 xcap xtal vccdig vcccp pump sleep iout iout vccbb qout qout data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 3
PS20039 data sheet figure 3 - detailed block diagram rfin 15 bit programmable divider fpd charge pump i2c bus interface ref osc reference divider fcomp sda scl xtal xcap pump iout qout rfagc phase splitter vco bank 0 deg 90 deg p0 rfbypass filter filter bandwidth adjust lock detect dc correction vccdig vcccp vccbb vccrf1 vccrf2 vcclo qout iout lotest pad/ref (paddle) sleep dc correction vccvco vvar lna agc port interface bf data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 4
PS20039 data sheet 1.0 circuit description 1.1 functional description the PS20039 is a single chip wide band direct conversion tuner with integral rf bypass optimised for digital satellite receiver systems. it provides excellent performance in applications where maximum sensitivity is required. the device offers a highly integrated solution for a satellite tuner incorporating a low phase noise pll frequency synthesiser, the quadrature down converter, a fully integrated local oscillator, and programmable baseband channel filters. a minimal number of additional peripheral components are required. the crystal reference source can be also used as the reference for the demodulator. an i 2 c compatible bus interface controls all of the tuner functionality. the PS20039 contains both hardware and software power down modes. 1.2 signal path 1.2.1 rf input the tuner rf input signal at a frequency of 950 ? 2150 mhz is fed to the ps200 39 rf input pre-amplifier stage. the signal handling is designed such that no tracking filter is required to offer immunity to input signal composite overload. the rf input amplifier feeds an agc stage, which provides rf gain control. there is additional gain adjustment in the baseband section. the total agc gain range will guarantee an operating dynamic range of ?92 to ?10 dbm. the rf agc in the ps20 039 is a continually variable gain control stage, and provides the main system agc set under control of the analogue agc signal generated by the demodulator. the analogue rf agc is optimised for s/n and s/i performance across the full dynamic range. typical rf agc characteristic and variation of iip3, iip2 and nf are shown in section 8 - typical performance curves. the output of the agc stage is coupled to the quadrature mixer where the rf signal is mixed with quadrature local oscillator signals generated by the on-board local oscillator. 1.2.2 baseband the outputs of the quadrature down converter are passed through the baseband filters followed by a programmable baseband gain stage. the baseband paths are dc coupled. an integrated dc correction loop prevents saturation due to local oscillator self-mixing in the converter section. no external components are required for dc correction. the baseband filters are 5 th order chebychev and provide excellent matching in both amplitude and phase between the i and q channels. the filters are fully programmable for 3 db bandwidths from 6 mhz to 43 mhz. the recommended filter bandwidth is related to the required symbol rate by the following equation. this equation makes no allowance for lnb tuning offset at low symbol rates < 10ms/s. the baseband filter uses an automatic tuning algorithm to calibrate the filter bandwidth to the programmed requirement. this removes any variation due to operating conditions and process variations. the automatic tuning 8.02 35.1 3 = ? symbolrate fc width filterband db data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 5
PS20039 data sheet algorithm uses a frequency locked loop, which locks the filter bandwidth to a reference frequency derived from the crystal reference input frequency. further details are provided in the programming section. the filters are followed by a programmable gain stage. this provides twelve 1.5 db gain steps. these can be used for optimising performance at different symbol rates and for adjusting the output level in applications not using ps20 313. the differential outputs of each channel stage are designed for low impedance drive capability and low intermodulation. 1.2.3 rf bypass the ce5039 provides a single ended bypass function, which can be used for driving a second receiver module. the electrical characteristics of the rf input are unchanged whether the rf bypass is enabled or disabled. the rf bypass powers up in the enabled state and can also operate with the remainder of the device in power down modes. 1.3 local oscillator generation 1.3.1 on chip vco the local oscillator on the ps200 039 is fully integrated. it consists of three independently selectable oscillator stages with sub bands. the three o sc illators and sub-bands are designed to provide optimum phase noise performance over the required tuning range of 950 to 2150 mhz, over operating conditions and process variations. the local oscillators operate at a harmonic of the required local oscillator frequency and are divided down to the required lo frequency. the required divider ratio is automatically selected by the local oscillator control logic. the oscillators are fully controlled by an on-chip automatic tuning algorithm. the user simply programs the required lo frequency. the control logic automatically selects the required vco and sub band to give optimum performance. vco settling time is minimized as different tuning algorithms are used, depending on the magnitude of the lo frequency change required. this choice of algorithm is also automatic and does not require user intervention. the oscillator control logic tracks any changes in operating conditions and will retune the vco if necessary, however hysteresis is built into this function to avoid unnecessary switching. all oscillator components are included on the chip including the vco varactor. an external loop filter is required as part of the pll frequency synthesiser. 1.3.2 pll frequency synthesiser the fully integrated pll frequency synthesiser section controls the lo frequency. the only external requirements are crystal reference and simple second order loop filter. the pll can be operated up to comparison frequencies of 2 mhz enabling a wide loop bandwidth for maximizing the close in phase noise performance. the local oscillator input signal is multiplexed from the active oscillator to an internal preamplifier, which provides gain and reverse isolation from the divider signals. the output of the preamplifier provides the input to a 15-bit fully programmable divider with mn+a architecture incorporating a dual modulus 16/17 prescaler. the output of the programmable divider is fed to the phase comparator where it is compared in both phase and frequency domain with the comparison frequency. this frequency is derived either from the on-board crystal controlled oscillator or from an external reference source. in both cases the reference frequency is divided down to the comparison frequency by the reference divider, which is programmable into 1 of 15 ratios. data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 6
PS20039 data sheet the output of the phase detector feeds a charge pump which combined with an external loop filter integrates the current pulses to control the varactor voltage. the charge pump current is automatically varied by the vco control logic to compensate for vco gain variations that are dependent on selected sub band. the varactor control voltage is externally coupled to the oscillator section through the input pin vvar. 1.4 i 2 c interface all programming for the PS20039 is controlled by an i 2 c data bus and is compatible with 3v3 standard mode formats. data and clock ar e fed in on the sda and scl lines respectively as defined by i 2 c bus format. the device can either accept data (write mode), or send data (read mode). the lsb of the address byte (r/w) sets the device into write mode if it is logic ?0?, and read mode if it is logic ?1?. the i 2 c address is fixed at c0 (write)/c1(read) in hex format. the PS20039 contains 16 control registers. these registers are read/write registers. these registers are addressed as sub-addresses on the i 2 c bus. registers can be addressed as random access single write/read or random access sequential write and read as shown below. random access single write random access sequential write sto p random access single read random access sequential read w write bit a acknowledge bit n not acknowledge a sleep pin is provided. this powers down all sections of the chip including the crystal oscillator and i 2 c interface. the rf bypass function will be operational in this mode providing it has been previously enabled through the i 2 c interface. stop start device address w a register address n a register data n a stop stop start device address w a register address n a register data n a register data n+1 ... register data n+m a stop stop start device address w a register address n a start device address r a register data n n stop stop start device address w a register address n a start device address r a register data n a ... register data n+m n stop data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 7
PS20039 data sheet 2.0 register map and programming the register map is arranged as 16 byte-wide read/write registers grouped by functional block. the registers may be written to and read-back from either sequentially (for lowest overhead) or specifically (for maximum flexibility). a significant number of bits are used for test and evaluation purposes only and are fixed at logic ?0? or ?1?. the correct programming for these test bits is shown in the table below. it is essential that these values are programmed for correct operation. when the contents of the registers are read back the value of some bits may have changed from their programmed value. this is due to the internal automatic control which can update registers. any changes can be ignored. read only bits are marked with an asterisk (*). any data written to these bits will be ignored. registers are set to default settings on applying power. these conditions are shown below and in the applicable tables. x* denotes a read only test bit register block function 0pll plf2 14 2 13 2 12 2 11 2 10 2 9 2 8 1pll 2 7 2 6 2 5 2 4 2 3 2 2 2 1 2 0 2 pll 0 0 c1 c0 r3 r2 r1 r0 3 pll x*1000000 4 rf front end x* 1 1 0 1 1 len 0 5 base band bf7 bf6 bf5 bf4 bf3 bf2 bf1 bf0 6 base band 0 lf sf br4 br3 br2 br1 br0 7 base band blf* bg3 bg2 bg1 bg0 0 0 0 8 local oscillator flf* 0 1 0 0 0 0 0 9 local oscillator 1 0 1 0 0 0 1 0 a local oscillator 1 1 1 1 0 0 0 1 b local oscillator x* x* 1 1 1 0 0 0 c local oscillator 1 1 0 1 0 0 0 0 d local oscillator x* x* x* 1 0 0 0 0 e local oscillator x* x* 1 1 0 0 0 0 f general pd clr p0 0 x* x* x* x* table 2 - register map data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 8
PS20039 data sheet 2.1 pll registers there are four registers that control the pll: the plf bit is the pll lock detect circuit output. the plf bit is set after 64 consecutive comparison cycles in lock. a chip-wide reset initializes the lock detect output to 0. the 2[ 14:8 ] bits are the msb bits of the lo divider divide value. the 2[ 7:0 ] bits are the lsb bits of the lo divider divide value. the division ratio of the lo divider is fully programmable to integer values within the range of 240 to 32767. note that when the lo divider divide value is to be changed, the new value is not actually presented to the lo divider until all of the 15-bit control word 2[ 14:0 ] has been programmed. register 0 and 1 must be therefore be programmed (in any order) before the lo divider is updated even if the only data change is in one of the registers. the c[1:0] bits set the programmed charge pump current . the charge pump current is automatically increased to the next setting dependent on the vco sub band that has been selected by the vco tuning algorithm. this is to compensate for changes in vco gain and so provide consistent pll performance across all sub bands. programming the highest charge pump value will not allow the value to be incremented, therefore this value should not be programmed. the value read back for the charge pump current is the actual value in use for the selected sub band. bit field name default type description 7 plf - r pll lock flag 6:0 2 [14:8] 0 r/w msb bits of lo divider register table 3 - register 0 bit field name default type description 7:0 2 [7:0] 0 r/w lsb bits of lo divider register table 4 - register 1 bit field name default type description 7:6 - 0 r/w test modes 5:4 c[1:0] 0 r/w charge pump current 3:0 r[3:0] 0 r/w reference divider ratio table 5 - register 2 c[1] c[0] typ units 00 4 0 0u a 015 5 0u a 107 5 0u a 1 1 1000 ua table 6 - charge pump currents data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 9
PS20039 data sheet the r[3:0] bits select the reference divider divide ratio. the ratio selected is not a simple binary power-of-two value but through a lookup table, see table 7- pll reference divider ratios. this register controls test modes within the pll. this should be programmed with the default settings. 2.2 rf control register a single register controls rf programmability. r3 r2 r1 r0 division ratio 00002 00014 00108 00111 6 01003 2 01 016 4 01101 2 8 01112 5 6 10003 10015 10101 0 10112 0 11004 0 11 018 0 11101 6 0 11113 2 0 table 7 - pll reference divider ratios bit field name default type description 7:0 - 0x40 r/w test modes table 8 - register 3 bit field name default type description 7 - - r test modes 6:2 - 11011 r/w test modes 1 len 1 r/w bypass enable 0 - 0 r/w not used table 9 - register 4 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 10
PS20039 data sheet the len bit enables the rfbypass output. with this bit set, the rf bypass is active even if ?software? or ?hardware? power down has been selected. 2.3 base band registers there are three registers that control the base band: the bits bf[7:0] control the bandwidth of the baseband filter. an automatic adjustment routine synchronizes the filter bandwidth to a reference frequency derived from the crystal. the lf and sf bits disable the baseband filter adjustment. it is recommended that these bits are set after programming the filter bandwidth to prevent interactions within the circuit. these bits must be reset to enable the baseband filter bandwidth to be reprogrammed. the br[4:0] bits set the crystal reference divide ratio. this effectively determines the resolution setting of the baseband filters. the baseband filter settings (bf[7:0]) can be calculated from the following equation. see section 3 applications information, for a typical programming example. br[4:0] = 0 is invalid the blf bit indicates that the baseband adjustment has completed and locked. the control bits bg[3:0] define the gain of the base band post-filter amplifier. the following table shows the gain - note this is relative gain. the 1.5 db gain steps enable the baseband output level to be adjusted and optimise gain distribution for different symbol rates. bit field name default type description 7:0 bf[7:0] 0x3c r/w base band filter cut-off frequency table 10 - register 5 bit field name default type description 7-0r / wt e s t m o d e 6 lf 0 r/w baseband filter adjust disable 5 sf 0 r/w baseband filter adjust disable 4:0 br[4:0] 1000 r/w base band reference division ratio table 11 - register 6 bit field name default type description 7 blf - r base band lock flag 6:3 bg[3:0] 0111 r/w base band gain select 2:0 - 000 r/w test modes table 12 - register 7 1 ( ? = (mhz) frequency crystal 0]) : br[4 * 5. 088 * (mhz) bandwidth filter 0] :b f[7 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 11
PS20039 data sheet 2.4 local oscillator registers there are seven registers that control the local oscillator: these are used primarily for test and evaluation . although vco?s can be manu ally programmed, the user is recommended to use the default automatic settings as these provide optimum performance. the flf bit is the vco tuning controller lock output and is set when pll is locked and the automatic vco tuning is optimised and complete. register 9 to register e are for test modes only. it is however important that these registers are programmed with the values shown. bg[3] bg[2] bg[1] bg[0] gain (db) 00000 00011 . 5 00103 . 0 00114 . 5 01006 . 0 01017 . 5 01109 . 0 01111 0 . 5 10001 2 . 0 10011 3 . 5 10101 5 . 0 10111 6 . 5 table 13 - bg[3:0] control of base band post filter gain bit field name default type description 7 flf - r full lock flag 6:0 - 0x20 r/w test modes table 14 - register 8 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 12
PS20039 data sheet chip level control register bit field name default type description 7:0 - 0xa2 r/w test modes table 15 - register 9 bit field name default type description 7:0 - 0xf1 r/w test modes table 16 - register a bit field name default type description 7:6 - - r test modes (read only) 5:0 - 0x38 r/w test modes table 17 - register b bit field name default type description 7:0 - 0xd0 r/w test modes table 18 - register c bit field name default type description 7:5 - - r test modes (read only) 4:0 - 0x10 r/w test modes table 19 - register d bit field name default type description 7:6 - - r test modes (read only) 5:0 - 0x30 r/w test modes table 20 - register e data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 13
PS20039 data sheet 2.5 general control register this register controls powerdown and general control functions: the pd bit is the ?software? power down control. when this bit is set to 1, all the analogue blocks are powered down with the exception of the crystal oscillator. the i 2 c interface will remain active and can still be used to enable the rf bypass. setting the sleep input pin high also invokes ?software? power down with the addition of powering down the crystal oscillator to produce ?hardware? power down. the rf bypass will remain active if it has been previously programmed on the i 2 c bus. note that in ?hardware? power down, the i 2 c interface does not operate. the clr bit re-triggers the power-on-reset function. this resets all register values to their power-on reset default value. the clr bit is itself cleared. note that the chip-wide reset will reset the i 2 c interface and the current write sequence used to set this bit will not be acknowledged. the p0 bit controls the state of the output port according to table 22. bit field name default type description 7 pd 1 r/w power down 6 clr 0 r/w clear and reset logic 5 p0 0 r/w port 0 control 4-0r/wtest mode 3:0 - - r test mode (read only) table 21 - register f p0 output port state 0 off, high impedance 1 on, current sinking table 22 - output port states data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 14
ce5039 data sheet 3.0 applications information figure 4 - typical application with ps20313 demodulator c25 10nf +3v3_d c27 10nf c29 10nf c26 10nf c30 10nf mdo0 mdo1 mdo2 mdo3 mdo4 mdo5 mdo6 mdo7 moclk status diseqc0 diseqc1 bkerr moval mostrt irq vcore +3v3_d r9 100k diseqc1 3 diseqc0 4 reset 1 status 64 clk1 10 data1 11 irq 43 mostrt 46 moclk 62 mdo0 48 mdo1 49 mdo2 52 mdo3 53 mdo4 56 mdo5 57 mdo6 60 mdo7 61 moval 47 bkerr 63 vdd 5 addr4 38 addr3 37 addr2 36 addr1 35 cvdd 17 gnd 18 gnd 26 sleep 9 i in 25 i in 24 cvdd 32 gnd 31 q in 30 q in 29 gnd 23 cvdd 22 gnd 28 agc 41 xti 19 xto 20 vdd 39 clk2 15 data2 14 diseqc2 2 cvdd 7 cvdd 12 cvdd 50 cvdd 44 vdd 27 cvdd 59 vdd 55 gnd 21 gnd 58 gnd 54 gnd 51 gnd 45 gnd 40 gnd 13 gnd 8 gnd 6 oscmode 16 cvdd 34 gnd 33 test 42 analogue digital analogue digital digital u1 ps20313 diseqc2 data1 clk1 sleep r11 22k r10 36k +3v3_d data2 clk2 r16 4k7 r17 4k7 +3v3_d +3v3_d reset +3v3_d x1 10.111mhz qout 15 qoutb 16 vccbb 17 vccdig 26 ioutb 18 iout 19 sleep 20 scl 21 sda 22 xtal 25 xtalcap 24 vcccp 27 pump 28 vvar 1 p0 23 vccfe2 7 rfbypass 6 paddle pad vccfe1 8 nc 11 rfin 10 nc 12 nc 9 rfagc 14 vcclo 4 vccvco 3 lotest 5 nc 13 pad/ref 2 u3 PS20039 c31 100nf +3v3_d c32 100nf c36 100nf c33 100nf c34 100nf vcore c37 100nf c38 100nf c39 100nf c40 100nf c41 100nf c42 100nf c43 100nf c44 100nf c28 100nf c35 100nf c47 220nf r25 100r r24 1k2 tp17 r23 1k +3v3_d r14 100r r15 100r tp12 tp11 r8 470r r20 51r c48 22pf c51 nf r19 51r c21 22pf c45 nf r18 51r c17 22pf c18 nf r6 51r c1 22pf c2 nf c14 100nf r5 100k c12 10pf c13 10pf sleep c11 47pf c3 56pf c4 56pf c5 10nf c10 220nf +3v3_a xtal d1 bar63-03w c23 10nf c57 100pf c46 220nf l3 blm18rk102sn1d c6 10nf c7 220pf c9 22pf r3 8k2 r2 8k2 loop filter c24 10uf c16 220nf c22 100pf l1 4.7nh c8 1nf c19 47pf c15 220nf c20 100pf +3v3_a rf in 950-2150mhz 75 ohms r22 33r r21 33r r13 47k r12 nf +3v3_a +3v3_a tp1 vlnbrf sk2 clk data sk1 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 15
PS20039 data sheet figure 4 shows a typical application using a ps20313 as a demodulator. . the design uses a standard t wo la yer board. all components are mounted on the upper surface with the lower surface as a ground plane. the rf input does not require any external matching components although a coupling capacitor is required. the rf bypass output requires a series inductor for optimum matching. good decoupling should be used - these components should be mounted as close to the device as practicable. all ground contact to the PS20039 is to the ground ?paddle? on the underside of the package. this must be soldered fully to the board to ac hiev e best thermal and electrical contact. it is recommended that an array of vias (4 x 4) is used to achieve good contact to the ground plane underneath the device a common crystal reference can be used for the tuner and demodulator. the crystal oscillator capacitors are optimised for a 10.111 mhz reference. sensitivity is optimised by minimizing interaction from digital signal activity in the demodulator. this is achieved by filtering in the agc control, and filter networks in the baseband i and q signals between the demodulator and PS20039 . these networks should be mounted as close to the PS20039 as possible. the typical perf ormance from the refe rence design is shown in the table below: . parameter typ. units notes sensitivity dbm qef 27.5ms/s rate 7/8 no added noise c/n 27.5ms/s rate 7/8 2e-4 post viterbi ber 8.2 8.1 8.1 db db db input = -69 dbm -45 dbm -23 dbm c/n 2ms/s rate 7/8 2e-4 post viterbi ber 8.1 8.0 8.0 db db db input = -81dbm -45 dbm -23 dbm interference rejection ratio 27.5 ms/s rate 7/8. interferers at -25 dbm 32 35 45 db db db n+1 n+4 n+10 table 23 - typical performance using PS20039 and ps20313 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 16
PS20039 data sheet the bandwidth of the baseband filter is given by the following expression: equation 1 where: fbw = the filter bandwidth in mhz within the range 8 mhz to 43 mhz. fxtal = crystal oscillator frequency in mhz. br = decimal value of the bits br[4:0], range 1-31. (br = 0 is not allowed) bf = decimal value of the register bits bf[7:0], range 0 - 255. the above equation can be re-arranged as follows equation 2 it is recommended that br should be set so that is approximately 1 mhz this sets the bandwidth resolution to approximately 200khz the value of bf can now be calculated from equation 2 and rounded to the nearest integer: example conditions: fxtal = 10.111 mhz, fbw = 26.5 mhz choose br = 10 bf = 132 the actual filter bandwidth is therefore given by: () 1 bf x 5.088 x br fxtal fbw + = 1 fxtal br x 5.088 fbw x bf ? ? ? ? ? ? ? = br fxta l 132.3 5 1 10.111 10 x 5.088 x 26.5 bf =? = () mh z 4326 5.088 1 x 1 132 x 10 10.111 fbw . = + = data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 17
ps200039 data sheet 4.0 pin descriptions pin# name description schematic 1 vvar lo voltage tuning input. 2 pad/ref bonded to paddle. production continuity test for paddle soldering and also ground reference for loop filter. 3 vccvco +3.3 v voltage supply for vco's. 4 vcclo +3.3 v voltage supply for lo circuits. 5 lotest for plessey testing only. must not connect. 6 rfbypass rf bypass output. ac couple. matching circuitry as shown in applications diagram. do not connect in applications where rf bypass is not required. 7 vccrf2 +3.3 v voltage supply for rf. 8 vccrf1 +3.3 v voltage supply for rf. 9 n/c not connected. 10 rfin rf input. ac couple. see applications diagram. 11 n/c not connected. 12 n/c not connected. 13 n/c not connected. vvar 100 vbias components per vco 120 rfbypass rfin vcc data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 18
PS20039 data sheet 14 rfagc rf analog gain control input. 15 16 qout qout q channel baseband differential outputs. ac couple as shown in application diagram. 17 vccbb +3.3 v voltage supply for baseband. 18 19 iout iout i channel baseband differential outputs. ac couple as shown in application diagram. same as pin 15,16 20 sleep hardware power down input. logic '0' normal mode. logic '1' - analog sections are powered down including crystal oscillator. 21 scl i 2 c serial clock input pin# name description schematic rfagc vcc 10k 30k vref output vcc sleep cmos digital input scl cmos digital input data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 19
PS20039 data sheet 22 sda i 2 c serial data input/output 23 p0 switching port output. open drain '0' = disabled (high impedance) '1' = enabled. 24 25 xcap xtal reference oscillator crystal inputs. xtal pin can be used for external reference via 10nf capacitor. see applications diagram for recommended external components (10.111 mhz) 26 vccdig +3.3 v voltage supply for digital logic. 27 vcccp +3.3 v voltage supply for varactor tuning. 28 pump charge pump output. pin# name description schematic sda cmos digital input/output p0 cmos digital output xcap 0.2 ma xtal 100 vcc pump vcc data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 20
PS20039 data sheet 5.0 absolute maximum ratings 6.0 operating conditions parameter min. max. units notes maximum voltage on any vcc pin -0.3 3.6 v maximum voltage between any two vcc pins 0.3 v maximum voltage on any other pin -0.3 vcc + 0.3 v the voltage on any pin must not exceed 3.6 v p0 output current 20 ma maximum rf input 10 dbm storage temperature -55 150 c junction temperature 125 c package thermal resistance 34 c/w package ground paddle soldered to ground esd protection 1.75 kv mil std 883b method 3015 cat1 parameter min. max. units notes supply voltage 3.15 3.45 v operating temperature -10 +85 c rf input frequency 950 2150 mhz baseband i/q output load 4.7 15 k pf data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 21
PS20039 data sheet 7.0 electrical characteristics test conditions (unless otherwise stated) t amb = 25 o c, vee= 0v, all vcc supplies = 3.3 v+-5% baseband gain = 9 db baseband filter bandwidth 26.5 mhz all power levels are referred to 75 (0 dbm = 109 db v) specifications refer to total cascaded system of converter/agc stage and baseband amplifier/filter stage. output amplitude of 0.5 vp-p differential. characteristic min. typ. max. units conditions supply current 145 155 200 215 ma ma outputs unloaded. max filter bandwidth rf bypass disabled rf bypass enabled hardware power down software power down 0.2 1.7 3 ma ma no rf input. crystal oscillator remains operational system input return loss 7 9 db zo = 75 . bypass enabled or disabled noise figure dsb 6 7 9 10 13 db db db at max gain at -70 dbm operating level at -60 dbm operating level variation in nf with rf gain adjust -1 db/db above -60dbm operating level operating dynamic range -92 -10 dbm 1ms/s operating dynamic range -84 -10 dbm 27.5ms/s conversion gain max min 72 78 -10 10 db db rfagc = 0.2v rfagc = 2.8v agc control range 68 72 db agc monotonic for rfagc from vee to vcc rfagc input current -150 150 a vee <= rfagc<= vcc system im2 -23 -30 dbc dbc baseband defined, note 1 rf front-end defined, note 2 system im3 -26 -38 dbc dbc note 3 note 4 iip2 5 dbm at -25 dbm input, note 2 iip3 -5 dbm at -25 dbm input, note 3 data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 22
PS20039 data sheet variation in system second order intermodulation intercept -1 db/db note 5 variation in system third order intermodulation intercept -1 db/db note 6 lo second harmonic interference level -50 -35 dbc note 7, all gain settings quadrature gain match -1 1 db 1.5 to 18 mhz quadrature phase match -3 -5 3 5 deg deg baseband signal = 1.5 mhz baseband signal = 18 mhz i & q channel in band ripple 1 db 1.5 to 18 mhz lo reference sideband spur level on i & q outputs -40 dbc synthesiser phase detector comparison frequency 500 - 2000 khz in band local oscillator leakage to rf input -65 -55 dbm dbm 950 - 2150 mhz 30 - 950 mhz channel lock time 50 ms worst case channels local oscillator vco gain 27 mhz/v lo = 2 ghz. note 8 ssb phase noise -83 -76 -96 -110 dbc/hz dbc/hz dbc/hz 10 khz offset 100 khz offset 1 mhz offset phase noise floor -132 dbc/hz integrated phase jitter 3 deg 10 khz to 15 mhz varactor input current -10 10 na vvar = 0.5 to 1.3 v baseband filters bandwidth 6 43 mhz max specified load bandwidth tolerance -1 +1 mhz all bandwidth settings time to change filter bandwidth 10 ms total harmonic distortion -30 dbc 1 vpp differential output at 43 mhz filter bandwidth rf bypass output load = 75 ohms gain -2 1.5 6 db noise figure 10 db opip3 5 db note 9 opip2 10 dbm note 10 characteristic min. typ. max. units conditions data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 23
PS20039 data sheet output return loss 9 db forward isolation 25 db 950-2150 mhz. bypass disabled reverse isolation 25 db 950-2150 mhz. bypass enabled or disabled in band lo leakage -65 dbm 950-2150 mhz. bypass enabled or disabled synthesiser charge pump current 304 422 578 762 400 550 750 1000 552 759 1035 1380 a a a a charge pump matching 2 % vpin = 0.5 to 1.3 v charge pump leakage -10 +/-3 +10 na vpin = 0.5 to 1.3 v charge pump compliance 0.4 vcc - 0.4 v crystal frequency 4 20 mhz recommended crystal series resistance 12 25 50 ohms 10 mhz crystal crystal power dissipation 100 500 w note 11 crystal load capacitance 16 pf note 11 crystal oscillator startup time 10 ms external reference input frequency 4 20 mhz ac coupled sinewave external reference drive level 0.5 2.0 vpp ac coupled sinewave phase detector comparison frequency 0.5 2 mhz equivalent phase noise at phase detector -148 dbc/hz 10 mhz crystal ssb within pll loop bandwidth interface sda, scl input high voltage input low voltage hysteresis input current 2.3 0 -10 0.4 3.6 1 10 v v a input = vee to vccdig +0.3 v sda output voltage 0.4 v isink = 3 ma scl clock rate 100 khz characteristic min. typ. max. units conditions data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 24
PS20039 data sheet note 1: agc set to deliver an output of 0 .5 vp-p with an input cw @ frequency fc of -25 dbm, undesired tones at fc+146 and fc+155 mhz @ -18 dbm, generating output im spur at 9 mhz. measured relative to unwanted signal. note 2: lo set to 2145 mhz and agc set to deliver a 5 mhz output of 0.5 vp-p with an input cw @ frequency 2150 mhz of ?25 dbm. undesired tones at 1.05 and 1.1 ghz at -25 dbm generating im spur at 5 mhz baseband. measured relative to unwanted signal. note 3: agc set to deliver an output of 0.5 vp-p with an input cw @ frequency fc of -25 dbm. two undesired tones at fc+205 and fc+405 mhz at -18 dbm, generating output im spur at 5 mhz. note 4: agc set to deliver an output of 0.5 vp-p with an input cw @ frequency fc of -25 dbm. two undesired tones at fc+205 and fc+405 mhz at -24 dbm, generating output im spur at 5 mhz. note 5: two undesired tones at 1.05 and 1.1 ghz at 0 dbc relative to desired at 2.15 ghz, local oscillator tuned to 2.145 ghz wi th agc set to deliver 0.5 vp-p differential on desired signal. desired input signal is varied from -25 dbm to -75 dbm. note 6: two undesired tones at fc+55 and fc+105 mhz at 7 dbc relative to desired at fc converted to 5 mhz baseband with local oscillator tuned to fc ghz with agc set to deliver 0.5 vp-p differential on desired signal. desired input signal is varied from - 30 dbm to -75 dbm, with the undesired amplitude capped at -25 dbm. note 7: the level of 2.01 ghz down converted to baseband relative to 1.01 ghz with the oscillator tuned to 1 ghz. note 8: reference vco gain value for loop filter calculations. using this recommended value then takes into account vco switchin g and automatic charge pump current variations. note 9: two input tones at fc+50 and fc+100 mhz at -18 dbm, generating output im product at fc. note 10: im2 product from two input tones at 1.05 and 1.1 ghz at -18 dbm, generating im product at 2150 mhz. note 11: crystal specifications vary considerably and significantly effect the choice of external oscillator capacitor values. e ach application may require separate consideration for optimum performance. external port p0 sink current leakage current 3 10 ma a vo = 0.7 v vo = vcc sleep input input high voltage input low voltage input current 1.9 vee 3.6 1.0 10 v v a vin = vee to vccdig characteristic min. typ. max. units conditions data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 25
PS20039 data sheet 8.0 typical performance data figure 5 - gain v. rfagc at 25c figure 6 - gain v rfagc v. temperature -20 -10 0 10 20 30 40 50 60 70 80 00.511.522.53 agc voltage conversion gain db lo 920mhz lo 1550mhz lo 2150mhz -20 -10 0 10 20 30 40 50 60 70 80 00.511.522.53 agc voltage conversion gain db +90c +25c -15c data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 26
PS20039 data sheet figure 7 - iip3 v gain at 25c figure 8 - iip3 v gain v temperature -60 -50 -40 -30 -20 -10 0 10 20 20 30 40 50 60 70 80 gain setting db iip3 dbm spec 3.1vcc 3.3vcc 3.5vcc -60 -50 -40 -30 -20 -10 0 10 20 20 30 40 50 60 70 80 gain setting db iip3 dbm spec +90c +25c -15c data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 27
PS20039 data sheet figure 9 - iip2 v gain at 25c figure 10 - iip2 v gain v temperature -50 -40 -30 -20 -10 0 10 20 30 40 20 30 40 50 60 70 80 gain setting db iip2 dbm spec 3.1vcc 3.3vcc 3.5vcc -50 -40 -30 -20 -10 0 10 20 30 40 20 30 40 50 60 70 80 gain setting db iip2 dbm spec +90c +25c -15c data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 28
PS20039 data sheet figure 11 - noise figure v freq at 25c figure 12 - noise figure v rfin v temperature 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 950 1150 1350 1550 1750 1950 2150 frequency (mhz) nf (db) 0 10 20 30 40 50 -80 -70 -60 -50 -40 -30 -20 -10 rfin (dbm) nf (db) -15c 25c 90c spec data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 29
PS20039 data sheet figure 13 - lo phase noise at 25c figure 14 - lo phase noise v temperature -130 -120 -110 -100 -90 -80 -70 10000 100000 1000000 10000000 frequency offset (hz) phase noise (dbc/hz) -120.0 -115.0 -110.0 -105.0 -100.0 -95.0 -90.0 -85.0 -80.0 1000 10000 100000 1000000 frequency offset (hz) phase noise (dbc/hz) -15degc +90degc data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 30
PS20039 data sheet figure 15 - rfin, rf bypass return loss figure 16 - rf bypass gain v temperature -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 950 1150 1350 1550 1750 1950 2150 frequency (mhz) return loss (db) s11 rfbypass on s22 rfbypass on -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 950 1150 1350 1550 1750 1950 2150 frequency (mhz) gain (db) -15c +25c +90c data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 31
PS20039 data sheet for further information about this and other products, please visit: www.plesseysemiconductors.com ? ? legal notice product information provided by plessey semiconductors limited ( ?plessey?) in this document is believed to be correct and a ccurate. plessey reserves the right to change/ correct the specifications and other data or information relating to products without notice but plessey accepts no liability for errors that may appear in th is document, howsoever occuring, or liabilit y arising from the use or application of any information or data provided herein. neither the supply of such information, nor t he purchase or use of products c onveys any licence or permission under patent, copyright, trademark or other intellectual property right of plessey or third parties. products sold by plessey are subject to its standard terms and conditions of sale that are av ailable on request. no warranty is given that products do not infringe the intellectual property rights of third partie s, and furthermore, the use of products in certain wa ys or in combination with plessey, or non-plessey furnished equipments/components may infringe intellectual property rights of plessey. the purpose of this document is to provide information only and it may not be used, applied or reproduced (in whole or in part ) for any purpose nor be taken as a representation relating to the produc ts in question. no warranty or guarantee express or implied is made concerning the capability, performance or suitability of any product, and in formation concerning possible app lications or methods of use is provided for guidance only and not as a recommendation. the user is solely responsible for determining the performance and suitability of the product in any application and checking that any specification or data it seeks to rely on has not been superceded. products are intended for normal commercia l applications. for applicati ons requiring unusual environment al requirements, extend ed temperature range, or high reliability capability (eg military, or medical applications) , spec ial processing/testing/conditio ns of sale may be available on application to plessey. data sheet 291467 issue 1 plessey semiconductors ltd. design & technology centre, delta 500, delta business park, great western way, swindon, uk sn5 7xe tel: +44 1793 518000 fax: +44 1793 518030 web: www.plesseysemi.com 32


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